STMicroelectronicsSTGWA30M65DF2IGBT-Chip

Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-247 Tube

This STGWA30M65DF2 IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 258000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology. It is made in a single configuration.

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Quantity Increments of 600 Minimum 600
  • Manufacturer Lead Time:
    15 Wochen
    • Price: 1,7537 €
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