STMicroelectronicsSTGWA40S120DF3IGBT-Chip
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21 |
| Verpackungsbreite | 5 |
| Verpackungslänge | 15.8 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
The STGWA40S120DF3 IGBT transistor from STMicroelectronics will work effectively even with higher currents. Its maximum power dissipation is 468000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |