STMicroelectronicsSTGWT20IH125DFIGBT-Chip
Trans IGBT Chip N-CH 1250V 40A 259W 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 1250 | |
| ±20 | |
| 2.55 | |
| 40 | |
| 0.25 | |
| 259 | |
| -55 | |
| 175 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 18.7 |
| Verpackungsbreite | 5(Max) |
| Verpackungslänge | 15.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
This powerful and secure STGWT20IH125DF IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 1250 V. Its maximum power dissipation is 259000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |