STMicroelectronicsSTGWT20V60DFIGBT-Chip
Trans IGBT Chip N-CH 600V 40A 167W 3-Pin(3+Tab) TO-3P Tube
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 18.7 mm |
| Verpackungsbreite | 5(Max) mm |
| Verpackungslänge | 15.8(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
This STGWT20V60DF IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 167000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |