STMicroelectronicsSTGWT30H60DFBIGBT-Chip
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.55 | |
| 60 | |
| 0.25 | |
| 260 | |
| -55 | |
| 175 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 18.7 |
| Verpackungsbreite | 4.8 |
| Verpackungslänge | 15.6 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
This STGWT30H60DFB IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.
| EDA / CAD Models |