STMicroelectronicsSTGWT40H65DFBIGBT-Chip
Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 18.7 |
| Verpackungsbreite | 5(Max) |
| Verpackungslänge | 15.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
This fast-switching STGWT40H65DFB IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 283000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.
| EDA / CAD Models |
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