STMicroelectronicsSTGWT60H65DFBIGBT-Chip
Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 18.7 |
| Verpackungsbreite | 5(Max) |
| Verpackungslänge | 15.8(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
This powerful and secure STGWT60H65DFB IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |