STMicroelectronicsSTGWT60H65FBIGBT-Chip
Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 650 | |
| ±20 | |
| 1.6 | |
| 80 | |
| 0.25 | |
| 375 | |
| -40 | |
| 175 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 18.7 |
| Verpackungsbreite | 4.8 |
| Verpackungslänge | 15.6 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
The STGWT60H65FB IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 375000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |