STMicroelectronicsSTGY40NC60VDIGBT-Chip
Trans IGBT Chip N-CH 600V 80A 260W 3-Pin(3+Tab) Max247 Tube
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.3(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 15.9(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | Max247 |
| 3 |
You can use this STGY40NC60VD IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |