STMicroelectronicsSTGY80H65DFBIGBT-Chip
Trans IGBT Chip N-CH 650V 120A 469W 3-Pin(3+Tab) Max247 Tube
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.3(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 15.9(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Lieferantenverpackung | Max247 |
| 3 | |
| Leitungsform | Through Hole |
The STGY80H65DFB IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 469000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |