STMicroelectronicsSTN2580GP BJT

Trans GP BJT NPN 400V 1A 1600mW 4-Pin(3+Tab) SOT-223 T/R

If your circuit's specifications require a device that can handle high levels of voltage, STMicroelectronics' NPN STN2580 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.

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20.000 Stück: heute versandbereit

    Total696,50 €Price for 5000

    • (1000)

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      +
      Manufacturer Lead Time:
      14 Wochen
      Country Of origin:
      China
      • In Stock: 20.000 Stück
      • Price: 0,1393 €