STMicroelectronicsSTN790AGP BJT
Trans GP BJT PNP 30V 3A 1600mW 4-Pin(3+Tab) SOT-223 T/R
Compliant with Exemption | |
EAR99 | |
Active | |
STN790A | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Single Dual Collector | |
1 | |
40 | |
30 | |
5 | |
1@10mA@1A | |
0.15@5mA@0.5A|0.25@20mA@1.2A|0.5@20mA@2A|0.7@100mA@3A|0.9@100mA@3A | |
3 | |
10000 | |
100@10mA@2V|100@1A@2V|100@2A@1V|100@500mA@2V|90@3A@1V | |
1600 | |
100(Typ) | |
-65 | |
150 | |
Tape and Reel | |
Industrial | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.8(Max) |
Verpackungsbreite | 3.5 |
Verpackungslänge | 6.5 |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-223 |
4 | |
Leitungsform | Gull-wing |
Design various electronic circuits with this versatile PNP STN790A GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1600 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |