STMicroelectronicsSTN83003GP BJT
Trans GP BJT NPN 400V 1.5A 1600mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 400 | |
| 12 | |
| 1@0.1A@0.5A | |
| 0.5@0.1A@0.5A|1@50mA@0.35A | |
| 1.5 | |
| 10@10mA@5V|16@0.35A@5V|4@1A@5V | |
| 1600 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.8(Max) |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
STMicroelectronics has the solution to your circuit's high-voltage requirements with their NPN STN83003 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 12 V. Its maximum power dissipation is 1600 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 12 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |