STMicroelectronicsSTN9260GP BJT
Trans GP BJT PNP 600V 0.5A 1600mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 600 | |
| 7 | |
| 0.25 | |
| 1@10mA@100mA | |
| 150 | |
| 1@10mA@100mA | |
| 0.5 | |
| 50@20mA@5V | |
| 1600 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.8(Max) |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP STN9260 general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 600 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |