STMicroelectronicsSTP03D200Darlington BJT
Trans Darlington NPN 1200V 0.1A 40000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.6(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Amplify your current using STMicroelectronics' NPN STP03D200 Darlington transistor in order to yield a higher current gain. This Darlington transistor array's maximum emitter base voltage is 20 V, while its maximum base emitter saturation voltage is 2@0.5mA@50mA V. This product's maximum continuous DC collector current is 0.1 A, while its minimum DC current gain is 230@20mA@10 V|200@30mA@10V. It has a maximum collector emitter saturation voltage of 2@0.5mA@50mA V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 1200 V and a maximum emitter base voltage of 20 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |