| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) mm |
| Verpackungsbreite | 4.6(Max) mm |
| Verpackungslänge | 10.4(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Make an effective common gate amplifier using this STP7NM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 45000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology.
| EDA / CAD Models |