| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 300 | |
| 300 | |
| 5 | |
| 0.9@2mA@20mA | |
| 0.5@2mA@20mA | |
| 0.5 | |
| 25@1mA@10V|40@10mA@10V|40@30mA@10V | |
| 625 | |
| 50(Min) | |
| -65 | |
| 150 | |
| Bag | |
| Befestigung | Through Hole |
| Verpackungshöhe | 4.95(Max) |
| Verpackungsbreite | 3.94(Max) |
| Verpackungslänge | 4.95(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 | |
| Leitungsform | Through Hole |
If your circuit's specifications require a device that can handle high levels of voltage, STMicroelectronics' PNP STPSA92 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |