Compliant | |
EAR99 | |
Active | |
Automotive | No |
PPAP | No |
Power MOSFET | |
Single | |
SuperMESH | |
Enhancement | |
N | |
1 | |
600 | |
±30 | |
0.3 | |
15000@10V | |
4.9@10V | |
4.9 | |
94@25V | |
3000 | |
28 | |
5 | |
13 | |
5.5 | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Through Hole |
Verpackungshöhe | 4.95(Max) |
Verpackungsbreite | 3.94(Max) |
Verpackungslänge | 4.95(Max) |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-92 |
3 | |
Leitungsform | Formed |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? STMicroelectronics' STQ1NK60ZR-AP power MOSFET can provide a solution. Its maximum power dissipation is 3000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology.