Compliant | |
EAR99 | |
Obsolete | |
EA | |
Automotive | No |
PPAP | No |
Befestigung | Through Hole |
Verpackungshöhe | 4.95(Max) |
Verpackungsbreite | 3.94(Max) |
Verpackungslänge | 4.95(Max) |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-92 |
3 | |
Leitungsform | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN STX13003G GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.