Diodes IncorporatedSXTA42TAGP BJT
Trans GP BJT NPN 300V 0.5A 1000mW 4-Pin(3+Tab) SOT-89 T/R
Compliant | |
EAR99 | |
Active | |
8541.10.00.80 | |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Single Dual Collector | |
1 | |
300 | |
300 | |
7 | |
0.9@2mA@20mA | |
0.5@2mA@20mA | |
0.5 | |
25@1mA@10V|40@10mA@10V|40@30mA@10V | |
1000 | |
50(Min) | |
-65 | |
150 | |
Tape and Reel | |
Automotive | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.6(Max) |
Verpackungsbreite | 2.6(Max) |
Verpackungslänge | 4.6(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-89 |
4 | |
Leitungsform | Flat |
Design various electronic circuits with this versatile NPN SXTA42TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.