ToshibaTD62783AFNG(O,S)Darlington BJT
Trans Darlington NPN/PNP 50V 0.5A 960mW 18-Pin SSOP
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| EA | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Octal Common Emitter | |
| 8 | |
| 50 | |
| Bipolar | |
| 0.5 | |
| 1.8@100mA|1.9@225mA|2@350mA | |
| 960 | |
| -40 | |
| 85 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.2 |
| Verpackungsbreite | 4.4 |
| Verpackungslänge | 6.8(Max) |
| Leiterplatte geändert | 18 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SSOP |
| 18 | |
| Leitungsform | Gull-wing |
This npn and PNP TD62783AFNG(O,S) Darlington transistor from Toshiba amplifies your current and yields a much higher current gain than other transistors. This product's maximum continuous DC collector current is 0.5 A. It has a maximum collector emitter saturation voltage of 1.8@100mA|1.9@225mA|2@350mA V. Its maximum power dissipation is 960 mW. This Darlington transistor array has a minimum operating temperature of -40 °C and a maximum of 85 °C.
| EDA / CAD Models |