STMicroelectronicsTIP102Darlington BJT
Trans Darlington NPN 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.6(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
If you require a higher current gain value in your circuit, then the NPN TIP102 Darlington transistor, developed by STMicroelectronics, is for you. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@3A@4 V|200@8A@4V. It has a maximum collector emitter saturation voltage of 2@6mA@3A|2.5@80mA@8A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |