Compliant with Exemption | |
EAR99 | |
Active | |
8541.21.00.75 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Single | |
1 | |
60 | |
60 | |
5 | |
2 | |
1000 | |
2.5@8mA@2A | |
1000@1A@4V|500@2A@4V | |
2000 | |
-65 | |
150 | |
Tube | |
Industrial | |
Befestigung | Through Hole |
Verpackungshöhe | 9.15(Max) |
Verpackungsbreite | 4.6(Max) |
Verpackungslänge | 10.4(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
If you require a higher current gain value in your circuit, then the PNP TIP115 Darlington transistor, developed by STMicroelectronics, is for you. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
EDA / CAD Models |