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onsemiTIP120GDarlington BJT
Trans Darlington NPN 60V 5A 2000mW 3-Pin(3+Tab) TO-220AB Tube
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 5 | |
| 200 | |
| 2@12mA@3A|4@20mA@5A | |
| 1000@0.5A@3V|1000@3A@3V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.28(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.53(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO-220 |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Amplify your current using ON Semiconductor's NPN TIP120G Darlington transistor in order to yield a higher current gain. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@0.5A@3 V|1000@3A@3V. It has a maximum collector emitter saturation voltage of 2@12mA@3A|4@20mA@5A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |