STMicroelectronicsTIP132Darlington BJT
Trans Darlington NPN 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 8 | |
| 200 | |
| 2@16mA@4A|4@30mA@6A | |
| 500@1A@4V|1000@4A@4V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) mm |
| Verpackungsbreite | 4.6(Max) mm |
| Verpackungslänge | 10.4(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
The NPN TIP132 Darlington transistor from STMicroelectronics is the perfect solution when amplified current gain values are needed. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 500@1A@4 V|1000@4A@4V. It has a maximum collector emitter saturation voltage of 2@16mA@4A|4@30mA@6A V. Its maximum power dissipation is 2000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |