onsemiTIP141GDarlington BJT
Trans Darlington NPN 80V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
If you require a higher current gain value in your circuit, then the NPN TIP141G Darlington transistor, developed by ON Semiconductor, is for you. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 3.5@40mA@10A V. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 1000@5A@4 V|500@10A@4V. It has a maximum collector emitter saturation voltage of 2@10mA@5A|3@40mA@10A V. Its maximum power dissipation is 125000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |