STMicroelectronicsTIP147Darlington BJT
Trans Darlington PNP 100V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Single | |
1 | |
100 | |
100 | |
5 | |
10 | |
1000 | |
2@10mA@5A|3@40mA@10A | |
1000@5A@4V|500@10A@4V | |
125000 | |
-65 | |
150 | |
Tube | |
Befestigung | Through Hole |
Verpackungshöhe | 20.15(Max) |
Verpackungsbreite | 5.15(Max) |
Verpackungslänge | 15.75(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-247 |
3 | |
Leitungsform | Through Hole |
If you require a higher current gain value in your circuit, then the PNP TIP147 Darlington transistor, developed by STMicroelectronics, is for you. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 1000@5A@4 V|500@10A@4V. It has a maximum collector emitter saturation voltage of 2@10mA@5A|3@40mA@10A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |