onsemiTIP29BGGP BJT

Trans GP BJT NPN 80V 1A 2000mW 3-Pin(3+Tab) TO-220AB Tube

The three terminals of this NPN TIP29BG GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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1 Stück: Versand in vsl. 10 Tagen

    Total0,14 €Price for 1

    • Versand in vsl. 10 Tagen

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1914+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      China
      • In Stock: 1 Stück
      • Price: 0,1352 €