onsemiTIP32CGGP BJT

Trans GP BJT PNP 100V 3A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Implement this PNP TIP32CG GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

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Auf Lager: 2.700 Stück

Regional Inventory: 1.450

    Total12,92 €Price for 50

    1.450 auf Lager: morgen versandbereit

    • (50)

      morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2420+
      Manufacturer Lead Time:
      11 Wochen
      Country Of origin:
      China
      • In Stock: 1.450 Stück
      • Price: 0,2583 €
    • Versand in vsl. 3 Tagen

      Ships from:
      Niederlande
      Date Code:
      2422+
      Manufacturer Lead Time:
      11 Wochen
      Country Of origin:
      China
      • In Stock: 1.250 Stück
      • Price: 0,6467 €