Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single | |
1 | |
40 | |
40 | |
5 | |
1 | |
-65 to 150 | |
1.2@375mA@3A | |
3 | |
25@1A@4V|10@3A@4V | |
2000 | |
3(Min) | |
-65 | |
150 | |
Tube | |
Befestigung | Through Hole |
Verpackungshöhe | 9.28(Max) |
Verpackungsbreite | 4.83(Max) |
Verpackungslänge | 10.53(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
The versatility of this PNP TIP32G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.