STMicroelectronicsTIP35CWGP BJT
Trans GP BJT NPN 100V 25A 125000mW 3-Pin(3+Tab) TO-247 Tube
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Single | |
1 | |
100 | |
100 | |
5 | |
150 | |
1.8@1.5A@15A|4@5A@25A | |
25 | |
25@1A@10V|10@15A@4V | |
125000 | |
-65 | |
150 | |
Tube | |
Industrial | |
Befestigung | Through Hole |
Verpackungshöhe | 20.15(Max) |
Verpackungsbreite | 5.15(Max) |
Verpackungslänge | 15.75(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-247 |
3 | |
Leitungsform | Through Hole |
Design various electronic circuits with this versatile NPN TIP35CW GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |