onsemiTIP47GGP BJT

Trans GP BJT NPN 250V 1A 40000mW 3-Pin(3+Tab) TO-220AB Tube

Implement this versatile NPN TIP47G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Import TariffMay apply to this part

2.860 Stück: heute versandbereit

    Total0,48 €Price for 1

    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2348+
      Manufacturer Lead Time:
      14 Wochen
      Country Of origin:
      China
      • In Stock: 2.860 Stück
      • Price: 0,4822 €