| RoHS EU | Compliant with Exemption |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.28(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.53(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
Look no further than ON Semiconductor's NPN TIP50G general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
