ToshibaTTA1943(Q)GP BJT

Do you require a transistor in your circuit operating in the high-voltage range? This PNP TTA1943(Q) general purpose bipolar junction transistor, developed by Toshiba, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V.