| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8542.39.00.01 |
| Automotive | No |
| PPAP | No |
| Typ | NPN |
| Konfiguration | Array 7 |
| Anzahl von Elementen pro Chip | 7 |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Emitter-Basis-Spannung (V) | 30 |
| Max. Dauer-Kollektorgleichstrom (A) | 0.5 |
| Operating Junction Temperature (°C) | -40 to 125 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA |
| Mindestbetriebstemperatur (°C) | -40 |
| Max. Betriebstemperatur (°C) | 105 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 10(Max) |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| Stiftanzahl | 16 |
| Leitungsform | Gull-wing |
Do you have a circuit where a higher current gain is required? Texas Instruments' NPN ULN2003AIDR Darlington transistor can help! This product's maximum continuous DC collector current is 0.5 A. It has a maximum collector emitter saturation voltage of 1.1@100mA|1.3@200mA|1.6@350mA V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 50 V. This Darlington transistor array has a minimum operating temperature of -40 °C and a maximum of 105 °C.
