ToshibaULN2003APG(C,N,HZADarlington BJT
Trans Darlington NPN 50V 0.5A 1470mW 16-Pin PDIP
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.5 |
| Verpackungsbreite | 6.4 |
| Verpackungslänge | 19.75(Max) |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | PDIP |
| 16 | |
| Leitungsform | Through Hole |
If you require a higher current gain value in your circuit, then the NPN ULN2003APG(C,N,HZA Darlington transistor, developed by Toshiba, is for you. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 1000@350mA@2 V. It has a maximum collector emitter saturation voltage of 1.1@100mA|1.3@200mA|1.6@350mA V. Its maximum power dissipation is 1470 mW. It has a maximum collector emitter voltage of 50 V. This Darlington transistor array has an operating temperature range of -40 °C to 85 °C.
| EDA / CAD Models |