Texas InstrumentsULN2003LVDRDarlington BJT
Trans Darlington 8V 1A 1110mW 16-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 10(Max) |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 16 | |
| Leitungsform | Gull-wing |
Texas Instruments' ULN2003LVDR Darlington transistor is the ideal component to use in situations where a higher current gain is needed. Its maximum power dissipation is 580 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This Darlington transistor array has a minimum operating temperature of -40 °C and a maximum of 85 °C.
| EDA / CAD Models |