| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8542330001 |
| Automotive | No |
| PPAP | No |
| Typ | NPN |
| Konfiguration | Array 7 |
| Anzahl von Elementen pro Chip | 7 |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Emitter-Basis-Spannung (V) | 30 |
| Max. Dauer-Kollektorgleichstrom (A) | 0.5 |
| Operating Junction Temperature (°C) | 150 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA |
| Mindestbetriebstemperatur (°C) | -20 |
| Max. Betriebstemperatur (°C) | 70 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 10(Max) |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| Stiftanzahl | 16 |
| Leitungsform | Gull-wing |
Are traditional transistors not providing enough of a current gain? The NPN ULN2004ADR Darlington transistor from Texas Instruments can help. This product's maximum continuous DC collector current is 0.5 A. It has a maximum collector emitter saturation voltage of 1.1@100mA|1.3@200mA|1.6@350mA V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This Darlington transistor array has an operating temperature range of -20 °C to 70 °C. It has a maximum collector emitter voltage of 50 V.
