| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Screw |
| Verpackungsbreite | 25.5(Max) |
| Verpackungslänge | 38.3(Max) |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | SOT-227 |
| 4 |
Don't be afraid to step up the amps in your device when using this VS-GT175DA120U IGBT transistor from Vishay. Its maximum power dissipation is 1087000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single dual emitter configuration. This device utilizes trench technology.
| EDA / CAD Models |