Diodes IncorporatedZTX601BSTZDarlington BJT
Trans Darlington NPN 160V 1A 1000mW 3-Pin E-Line Box
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 4.01(Max) |
| Verpackungsbreite | 2.41(Max) |
| Verpackungslänge | 4.77(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Higher current yields within your circuit is what you will get with Diodes Zetex's NPN ZTX601BSTZ Darlington transistor. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.9@10mA@1A V. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 5000@50mA@10 V|10000@500mA@10V|5000@1A@10V. It has a maximum collector emitter saturation voltage of 1.1@5mA@0.5A|1.2@10mA@1A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 10 V.
| EDA / CAD Models |