Diodes IncorporatedZTX603STZDarlington BJT
Trans Darlington NPN 80V 1A 1000mW 3-Pin E-Line Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 mm |
| Verpackungsbreite | 2.28 mm |
| Verpackungslänge | 4.57 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Compared to other transistors, the NPN ZTX603STZ Darlington transistor from Diodes Zetex can provide you with a higher current gain value. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.8@1mA@1A V. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 2000@50mA@5 V|5000@500mA@5V|2000@1A@5V|500@2A@5V. It has a maximum collector emitter saturation voltage of 1@0.4mA@400mA|1@1mA@1A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 10 V.
| EDA / CAD Models |