Diodes IncorporatedZTX605STZDarlington BJT
Trans Darlington NPN 120V 1A 1000mW 3-Pin E-Line Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 120 | |
| 140 | |
| 10 | |
| 1.8@1mA@1A | |
| 1 | |
| 0.01 | |
| 1.5@1mA@1A|1@0.25mA@250mA | |
| 150(Min) | |
| 2000@1A@5V|2000@50mA@5V|5000@500mA@5V|500@2A@5V | |
| 1000 | |
| -55 | |
| 200 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 |
| Verpackungsbreite | 2.28 |
| Verpackungslänge | 4.57 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Are you looking for an amplified current signal in your circuit? The NPN ZTX605STZ Darlington transistor from Diodes Zetex yields a much higher gain than other transistors. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 2000@50mA@5 V|5000@500mA@5V|2000@1A@5V|500@2A@5V. It has a maximum collector emitter saturation voltage of 1.5@1mA@1A|1@0.25mA@250mA V. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.8@1mA@1A V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -55 °C to 200 °C.
| EDA / CAD Models |