| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 mm |
| Verpackungsbreite | 2.28 mm |
| Verpackungslänge | 4.57 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
If you require a general purpose BJT that can handle high voltages, then the NPN ZTX651 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
| EDA / CAD Models |