Diodes IncorporatedZTX653STZGP BJT
Trans GP BJT NPN 100V 2A 1000mW 3-Pin E-Line Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 |
| Verpackungsbreite | 2.28 |
| Verpackungslänge | 4.57 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Compared to other transistors, the NPN ZTX653STZ general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |