Diodes IncorporatedZTX690BSTZGP BJT
Trans GP BJT NPN 45V 2A 1000mW 3-Pin E-Line Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 45 | |
| 45 | |
| 5 | |
| 0.9@10mA@1A | |
| 0.1@0.5mA@0.1A|0.5@5mA@1A | |
| 2 | |
| 100 | |
| 150@2A@2V|400@1A@2V|500@100mA@2V | |
| 1000 | |
| 150(Min) | |
| -55 | |
| 200 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 |
| Verpackungsbreite | 2.28 |
| Verpackungslänge | 4.57 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| 3 | |
| Leitungsform | Through Hole |
Implement this NPN ZTX690BSTZ GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |