| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.75 |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.9 |
| Verpackungsbreite | 2.28 |
| Verpackungslänge | 4.57 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | E-Line |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
If your circuit's specifications require a device that can handle high levels of voltage, Diodes Zetex's PNP ZTX751 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
