Diodes IncorporatedZX5T851GTAGP BJT
Trans GP BJT NPN 60V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 150 | |
| 60 | |
| 7 | |
| 1.1@300mA@6A | |
| 0.03@5mA@100mA|0.06@100mA@1A|0.07@50mA@1A|0.135@50mA@2A|0.26@300mA@6A | |
| 6 | |
| 20 | |
| 100@10mA@1V|100@2A@1V|20@10A@1V|55@5A@1V | |
| 3000 | |
| 130(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Jump-start your electronic circuit design with this versatile NPN ZX5T851GTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |