Diodes IncorporatedZX5T955ZTAGP BJT

Trans GP BJT PNP 140V 3A 2100mW 4-Pin(3+Tab) SOT-89 T/R

Implement this PNP ZX5T955ZTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

3.000 Stück: Versand in vsl. 3 Tagen

    Total0,18 €Price for 1

    • Versand in vsl. 3 Tagen

      Ships from:
      Niederlande
      Date Code:
      2214+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 3.000 Stück
      • Price: 0,1782 €