Diodes IncorporatedZXTN19100CZTAGP BJT
Trans GP BJT NPN 100V 5.25A 4460mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 mm |
| Verpackungsbreite | 2.5 mm |
| Verpackungslänge | 4.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
This NPN ZXTN19100CZTA general purpose bipolar junction transistor from Diodes Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |