Diodes IncorporatedZXTN25012EFLTAGP BJT
Trans GP BJT NPN 12V 2A 350mW 3-Pin SOT-23 T/R
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 20 | |
| 12 | |
| 7 | |
| 0.95@40mA@2A | |
| 0.065@100mA@1A|0.085@10mA@1A|0.13@40mA@2A|0.3@100mA@5A | |
| 2 | |
| 500@10mA@2V|500@1A@2V|370@2A@2V|210@5A@2V|30@15A@2V | |
| 350 | |
| 260(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) mm |
| Verpackungsbreite | 1.4(Max) mm |
| Verpackungslänge | 3.04(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
The NPN ZXTN25012EFLTA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 350 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |